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| Power Transistors 2SC3611 Silicon NPN epitaxial planar type For video amplifier Features * High transition frequency fT * Small collector output capacitance (Common base, input open circuited) Cob * Wide current range * TO-126B package which requires no insulation plate for installation to the heat sink 3.160.1 8.0+0.5 -0.1 Unit: mm 3.20.2 3.80.3 11.00.5 1.90.1 Absolute Maximum Ratings Ta = 25C 0.750.1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Resistor between B and E) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Symbol VCBO VCER VCEO VEBO IC ICP PC Tj Tstg Rating 110 100 50 3.5 150 300 1.2 4.0 * Unit V V V V mA mA W C C 4.60.2 0.50.1 0.50.1 2.30.2 3 1.760.1 1 2 Junction temperature Storage temperature 150 -55 to +150 Note) *: With a 100 x 100 x 2 mm Al heat sink Electrical Characteristics Ta = 25C 3C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Resistor between B and E) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-emitter cutoff current (Base open) Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCER VCEO VEBO ICEO hFE VCE(sat) fT1 fT2 Cob Conditions IC = 100 A, IE = 0 IC = 500 A, RBE = 470 IC = 1 mA, IB = 0 IE = 100 A, IC = 0 VCE = 35 V, IB = 0 VCE = 5 V, IC = 100 mA IC = 150 mA, IB = 15 mA VCB = 10 V, IE = -10 mA, f = 200 MHz VCB = 10 V, IE = -110 mA, f = 200 MHz VCB = 30 V, IE = 0, f = 1 MHz 300 350 3 pF 20 0.5 Min 110 100 50 3.5 10 Typ Max Unit V V V V A V MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 16.01.0 1: Emitter 2: Collector 3: Base TO-126B-A1 Package 3.050.1 Publication date: January 2003 SJD00108BED 1 2SC3611 PC Ta 5 240 (1)With a 100x100x2mm Al heat sink (2)Without heat sink TC=25C IC VCE 120 IC VBE VCE=5V Collector power dissipation PC (W) 4 (1) 200 IB=5.0mA 4.5mA 4.0mA 3.5mA 100 TC=100C 25C Collector current IC (mA) Collector current IC (mA) 160 80 -25C 3 120 3.0mA 2.5mA 60 2 80 2.0mA 1.5mA 40 (2) 1 40 1.0mA 0.5mA 20 0 0 40 80 120 160 200 240 0 0 0 2 4 6 8 10 12 0 0.2 0.4 0.6 0.8 1.0 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) 10 000 IC/IB=5 hFE IC VCE=5V fT I E 600 VCB=10V f=200MHz TC=25C 10 Forward current transfer ratio hFE 1 000 Transition frequency fT (MHz) 500 400 1 25C 100 TC=100C -25C 300 0.1 TC=100C -25C 25C 200 10 100 0.01 1 10 100 1 0.1 1 10 100 0 -1 -10 -100 -1 000 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 IE=0 f=1MHz TC=25C Safe operation area 1 000 ICP Single pulse TC=25C t=10ms 5 Collector current IC (mA) 100 IC t=100ms t=1s 4 3 10 2 1 1 0 1 10 100 0.1 1 10 100 1 000 Collector-base voltage VCB (V) Collector-emitter voltage VCE (V) 2 SJD00108BED 2SC3611 Rth t 104 free air Thermal resistance Rth (C/W) 103 102 10 1 10-1 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) SJD00108BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL This datasheet has been download from: www..com Datasheets for electronics components. |
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